MJ11015:30 A, 120 V PNP Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.

技术特性
  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C
封装图 PACKAGE DIMENSIONS

MJ11015 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJ11015G Active Pb-free 30 A, 120 V PNP Darlington Bipolar Power Transistor TO-204-2 1-07   Tray Foam 100 $2.0879
数据资料DataSheet下载
概述 版本信息 大小
MJ11015 数据资料DataSheet下载:pdf Rev.V2 2 页