MJ11032:50 A, 120 V NPN Darlington Bipolar Power Transistor

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

技术特性
  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

MJ11032 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJ11032G Active Pb-free 50 A, 120 V NPN Darlington Bipolar Power Transistor TO-204-2 / TO-3-2 197A-05   Tray Foam 100 $5.1479
数据资料DataSheet下载
概述 版本信息 大小
MJ11032 数据资料DataSheet下载:pdf Rev.V2 2 页