MJ14002:60 A, 80 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.

技术特性
  • High Current Capability - IC Continuous = 60 Amperes
  • DC Current Gain - hFE = 15-100 @ IC = 50 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

MJ14002封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJ14002G Active
Pb-free
60 A, 80 V NPN Bipolar Power Transistor TO-204-2 / TO-3-2 197A-05 Tray Foam 100 $8.3518
数据资料DataSheet下载
概述 文档编号/大小 版本
60 A, 80 V NPN Bipolar Power Transistor MJ14002-D(417.0kB) 3