MJD45H11 4.0 A, 100 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

技术特性
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - 
    ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
封装图 MARKING DIAGRAM

MJD45H11 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NJVMJD45H11T4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
4.0 A, 100 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.2787
MJD45H11 Last Shipments  4.0 A, 100 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tube 75  
MJD45H11T4 Last Shipments  4.0 A, 100 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500  
MJD45H11G Active
AEC Qualified
Pb-free
Halide free
4.0 A, 100 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tube 75 $0.2533
数据资料DataSheet下载
概述 版本信息 大小
MJD45H11 数据资料DataSheet下载:pdf Rev.V2 2 页