MJE171:3.0 A PNP Bipolar Power Transistor

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.

技术特性
  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 60 Vdc - MJE171, MJE181
    VCEO(sus) = 80 Vdc - MJE172, MJE182
  • DC Current Gain -
    hFE = 30 (Min) @ IC = 0.5 Adc
    hFE = 12 (Min) @ IC = 1.5 Adc
  • Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

MJE171封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE170G Active
Pb-free
Halide free
3.0 A PNP Bipolar Power Transistor, 40 V TO-225-3 77-09 Bulk Box 500 $0.2333
MJE171G Active
Pb-free
Halide free
3.0 A PNP Bipolar Power Transistor, 60 V TO-225-3 77-09 Bulk Box 500 $0.2333
MJE170 Last Shipments  3.0 A PNP Bipolar Power Transistor TO-225-3 77-09 Bulk Box 500  
MJE171 Last Shipments  3.0 A PNP Bipolar Power Transistor TO-225-3 77-09 Bulk Box 500  
数据资料DataSheet下载
概述 文档编号/大小 版本
3.0 A PNP Bipolar Power Transistor MJE171-D(417.0kB) 3