MJE181:3.0 A, 60 V NPN Bipolar Power Transistor
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.
技术特性
- Collector-Emitter Sustaining Voltage -
VCEO(sus) = 60 Vdc - MJE181, MJE181
VCEO(sus) = 80 Vdc - MJE181, MJE182
- DC Current Gain -
hFE = 30 (Min) @ IC = 0.5 Adc
hFE = 12 (Min) @ IC = 1.5 Adc
- Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJE181G |
Active |
|
3.0 A, 60 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
$0.24 |
| MJE181 |
Last Shipments |
|
3.0 A, 60 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
|
数据资料DataSheet下载
