MJE200: 5.0 A, 25 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

技术特性
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

MJE200封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE200G Active
Pb-free
Halide free
5.0 A, 25 V NPN Bipolar Power Transistor TO-225-3 77-09 Bulk Box 500 $0.2333
MJE200 Last Shipments  5.0 A, 25 V NPN Bipolar Power Transistor TO-225-3 77-09 Bulk Box 500  
数据资料DataSheet下载
概述 文档编号/大小 版本
5.0 A, 25 V NPN Bipolar Power Transistor MJE200-D(417.0kB) 3