MJE243: 4.0 A, 100 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

技术特性
  • High Collector-Emitter Sustaining Voltage - 
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc 
    hFE = 40-200 
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage - 
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product - 
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages 
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available
封装图 MARKING DIAGRAM

MJE243 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE243G Active
Pb-free
Halide free
4.0 A, 100 V NPN Bipolar Power Transistor TO-225-3 77-09   Bulk Box 500 $0.2533
MJE243 Last Shipments  4.0 A, 100 V NPN Bipolar Power Transistor TO-225-3 77-09   Bulk Box 500  
数据资料DataSheet下载
概述 版本信息 大小
MJE243 数据资料DataSheet下载:pdf Rev.V2 2 页