MJE4343: 16 A, 160 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices

技术特性
  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
封装图 PACKAGE DIMENSIONS

MJE4343封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE4343G Active
Pb-free
16 A, 160 V NPN Bipolar Power Transistor TO-247-3 340L-02 Tube 30 $1.8666
MJE4343 Last Shipments  16 A, 160 V NPN Bipolar Power Transistor SOT-93-3 / TO-218-3 340D-02 Tube 30  
数据资料DataSheet下载
概述 文档编号/大小 版本
16 A, 160 V NPN Bipolar Power Transistor MJE4343-D(417.0kB) 3