NGTB25N120IHL:IGBT 1200V 25A FS1 Induction Heating

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

技术特性
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Case Temperature in IH Cooker Application
  • Low Gate Charge
  • These are Pb−Free Devices
终端产品
  • Rice Cooker
  • Induction Cooktop
应用
  • Induction Heating
  • Consumer Appliances
  • Soft Switching
优势
  • Low Conduction Loss
  • Reduces system Power Dissipation
封装图 PACKAGE DIMENSIONS

NGTB25N120IHL封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NGTB25N120IHLWG Active
Pb-free
IGBT 1200V 25A FS1 Induction Heating TO-247-3 340L-02 Tube 30 $1.1
数据资料DataSheet下载
概述 文档编号/大小 版本
IGBT 1200V 25A FS1 Induction Heating NGTB25N120IHL/D (94.0kB) 2