NGTB25N120L:IGBT 1200V 25A FS1 Gen Mkt

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

技术特性

Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 s Short−Circuit Capability
These are Pb−Free Devices

终端产品

Inverter Welding Machines
Microwave Ovens

应用

Industrial Switching

优势

Low Conduction Loss
Reduces system Power Dissipation

封装图 PACKAGE DIMENSIONS

订购信息 Ordering Information

产品

状况

Compliance

具体说明

封装

MSL*

容器

预算价格 (1千个数量的单价）

类型

外形

类型

数量

NGTB25N120LWG

Active

Pb-free

IGBT 1200V 25A FS1 Gen Mkt

TO-247-3

340L-02

Tube

$1.32

数据资料DataSheet下载

概述	文档编号/大小	版本
IGBT 1200V 25A FS1 Gen Mkt	NGTB25N120L/D (94.0kB)	2