NGTB40N120FL:IGBT 1200V 40A FS1 Solar/UPS

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

技术特性
  • Low Saturation Voltage using NPT Trench with Field Stop
    Technology
  • Low Switching Loss Reduces System Power Dissipation
  • 10 s Short Circuit Capability
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode
  • These are Pb−Free Devices
终端产品
  • UPS System
  • Solar Inverter
应用
  • Power Conversion
优势
  • Reduces system Power Dissipation
封装图 PACKAGE DIMENSIONS

NGTB40N120FL封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NGTB40N120FLWG Active
Pb-free
Halide free
IGBT 1200V 40A FS1 Solar/UPS TO-247-3 340L-02 Tube 30 $2.81
数据资料DataSheet下载
概述 文档编号/大小 版本
IGBT 1200V 40A FS1 Solar/UPS NGTB40N120FL/D (94.0kB) 2