NGTB40N120L:IGBT 1200V 40A FS1 Gen Mkt
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
技术特性
- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Low Gate Charge
- 5 s Short−Circuit Capability
- These are Pb−Free Devices
应用
- Industrial Switching
- Industrial Motor Control
优势
- Reduces system Power Dissipation
- Low Conduction Loss
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGTB40N120LWG |
Active |
|
IGBT 1200V 40A FS1 Gen Mkt |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$2.43 |
数据资料DataSheet下载
