NGTB50N60FWG:IGBT, 600 V, 50 A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
技术特性
- Optimized for Very Low VCEsat
- Low Switching Loss Reduces System Power Dissipation
- Soft Fast Reverse Recovery Diode
- 5 s Short−Circuit Capability
- These are Pb−Free Devices
优势
- Reduces System Power Dissipation
应用
- Solar Inverters
- Motor Drives
- Uninterruptible Power Supplies (UPS)
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGTB50N60FWG |
Active |
|
IGBT, 600 V, 50 A |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$2.38 |
数据资料DataSheet下载
