NLAS3699B:Analog Switch, Dual DPDT

The NLAS3699B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra-Low RON of 0.6 Ω. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver.

技术特性
  • Ultra-Low RON of 0.6 Ohm max
  • High Isolation: -68 dB at 100 kHz
  • Low Standby Current, <50 nA
  • Low Distortion, < 0.08% THD
  • High Continuous Current Capability: 300 mA Through Each Switch
应用
  • Cell Phone Audio Block
  • Speaker and Earphone Switching
  • RingTone Chip / Amplifier Switching
终端产品
  • Cell Phones
封装图 MARKING DIAGRAM

NLAS3699B 封装图

订购信息 Ordering Information
产品 状况 Compliance 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NLAS3699BMN1R2G Active
Pb-free
Halide free
QFN-16 485AE 1 Tape and Reel 3000 $0.56
NLAS3699BMNTBG Active
Pb-free
Halide free
WQFN-10 488AQ 1 Tape and Reel 3000 $0.2667
数据资料DataSheet下载
概述 文档编号/大小 版本
Analog Switch, Dual DPDT NLAS3699B-D(417.0kB) 1