NSR0130P2:30 V, 0.1 A Low IR Schottky Diode
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
技术特性
- Extremely Fast Switching Speed
- Extremely Low Forward Voltage 0.385 V (max) @ IF = 10 mA
- Low Reverse Current
- This is a Pb−Free Device
| 应用
- Ideally suited for use as part of discrete buck converter or discrete boost converter.
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NSR0130P2T5G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
30 V, 0.1 A Low IR Schottky Diode |
SOD-923-2 |
514AA |
1 |
Tape and Reel |
8000 |
$0.0793 |
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