NSR0140P2:30 V, 0.1 A Low IR Schottky Diode

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

技术特性
  • Extremely Fast Switching Speed
  • Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mA
  • Low Reverse Current
  • Lead−Free Plating
  • This is a Pb−Free Device
应用
  • Ideally suited for use as part of discrete buck converter or discrete boost converter.
封装图 PACKAGE DIMENSIONS

NSR0140P2封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSR0140P2T5G Active
AEC Qualified
Pb-free
Halide free
30 V, 0.1 A Low IR Schottky Diode SOD-923-2 514AA 1 Tape and Reel 8000 $0.0793
数据资料DataSheet下载
概述 文档编号/大小 版本
30 V, 0.1 A Low IR Schottky Diode NSR0140P2-D(417.0kB) 1