NSS1C200 2.0 A, 100 V Low VCE(sat) PNP Bipolar Transistor

Low VCE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

技术特性
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
优势
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
终端产品
  • Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
封装图 PACKAGE DIMENSIONS

NSS1C200封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSS1C200MZ4T1G Active
AEC Qualified
Pb-free
Halide free
2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000 $0.176
NSS1C200MZ4T3G Active
AEC Qualified
Pb-free
Halide free
2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 4000 $0.176
NSV1C200MZ4T1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000 $0.1936
数据资料DataSheet下载
概述 版本信息 大小
NSS1C200 数据资料DataSheet下载:pdf Rev.V2 2 页