NSS20101JT1G 20 V, 1.0 A NPN Low VCE(sat) Bipolar Transistor

ON Semiconductor e2 PowerEdge family of Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

应用
  • 20 V, 1.0 A, Low VCE(sat)
    NPN Transistor
技术特性
  • This is a Pb-free device.
  • This is a Halide-free device.
  • AECQ101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
封装图 PACKAGE DIMENSIONS

NSS20101JT1G封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSS20101JT1G Active
AEC Qualified
Pb-free
Halide free
20 V, 1.0 A NPN Low VCE(sat)Bipolar Transistor SC-89-3 463C-02 1 Tape and Reel 3000 $0.0533
数据资料DataSheet下载
概述 文档编号/大小 版本
20 V, 1.0 A NPN Low VCE(sat) Bipolar Transistor NSS20101JT1G-D(417.0kB) 1