NTD4809N:Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK

Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK

技术特性
  • Low RDS(on)to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • These are Pb−Free Devices
应用
  • CPU Power Delivery
  • Low Side Switching
封装图 PACKAGE DIMENSIONS

NTD4809N封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTD4809N-1G Last Shipments 
Pb-free
Halide free
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK IPAK-4 369D 1 Tube 75  
NTD4809N-35G Active
Pb-free
Halide free
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK IPAK-3 369AD 1 Tube 75 $0.1867
NTD4809NT4G Active
Pb-free
Halide free
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK DPAK-3 369AA 1 Tape and Reel 2500 $0.1867
NVD4809NT4G Active
AEC Qualified
PPAP Capable
Pb-free
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK DPAK-3 369AA 1 Tape and Reel 2500 $0.194
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK NTD4809N/D (94.0kB) 2