NTLJF3117P: Power MOSFET 20V 4.1A 100 mOhm Dual P-Channel WDFN6 with Schottky Diode

Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, µCool™ Product Family

技术特性
  • FETKY Configuration with MOSFET plus Low Vf Schottky Diode
  • COOL Package Provides Exposed Drain Pad for Excellent
    Thermal Conduction
  • 2x2 mm Footprint Same as SC-88 Package Design
  • Independent Pinout Provides Circuit Design Flexibility
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
  • High Current Schottky Diode: 2 A Current Rating
  • This is a Pb-Free Device
应用
  • Optimized for Portable Applications like Cell Phones, Digital Cameras, Media Players, etc.
  • DC-DC Buck Circuit
  • Li-Ion Battery Applications
  • Color Display and Camera Flash Regulators
封装图 PACKAGE DIMENSIONS

NTLJF3117P封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTLJF3117PT1G Active
Pb-free
Halide free
Power MOSFET 20V 4.1A 100 mOhm Dual P-Channel WDFN6 with Schottky Diode WDFN-6 506AN 1 Tape and Reel 3000 $0.1455
NTLJF3117PTAG Last Shipments 
Pb-free
Halide free
Power MOSFET 20V 4.1A 100 mOhm Dual P-Channel WDFN6 with Schottky Diode WDFN-6 506AN 1 Tape and Reel 3000  
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Power MOSFET 20V 4.1A 100 mOhm Dual P-Channel WDFN6 with Schottky Diode NTLJF3117P/D (94.0kB) 2