NTLJF4156N:Power MOSFET 30V 4A 70 mOhm N-Channel with Schottky Diode in WDFN6 Package

Power MOSFET and Schottky Diode 30 V, 4.0 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

技术特性
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal
    Conduction
  • Co−Packaged MOSFET and Schottky For Easy Circuit Layout
  • RDS(on)Rated at Low VGS(on)Levels, VGS = 1.5 V
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • Low VF Schottky
  • This is a Pb−Free Device
应用
  • DC-DC Converters
  • Li-Ion Battery Applications in Cell Phones, PDAs, Media Players
  • Color Display and Camera Flash Regulators
封装图 PACKAGE DIMENSIONS

NTLJF4156N封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTLJF4156NT1G Active
Pb-free
Halide free
Power MOSFET 30V 4A 70 mOhm N-Channel with Schottky Diode in WDFN6 Package WDFN-6 506AN 1 Tape and Reel 3000 $0.14
NTLJF4156NTAG Active
Pb-free
Halide free
Power MOSFET 30V 4A 70 mOhm N-Channel with Schottky Diode in WDFN6 Package WDFN-6 506AN 1 Tape and Reel 3000 $0.14
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30V 4A 70 mOhm N-Channel with Schottky Diode in WDFN6 Package NTLJF4156N/D (94.0kB) 2