NTMD6N02: Power MOSFET 20V 6.5A 35 mOhm Dual N-Channel SO-8
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual, SO-8 Package
技术特性
- Ultra Low RDS(on)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive
- Miniature Dual SOIC−8 Surface Mount Package
- Diode Exhibits High Speed, Soft Recovery
- Avalanche Energy Specified
- SOIC−8 Mounting Information Provided
- Pb−Free Package is Available
优势
- DC-DC Converters
- Low Voltage Motor Control
- Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTMD6N02R2G |
Active |
|
Power MOSFET 20V 6.5A 35 mOhm Dual N-Channel SO-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.24 |
| NTMD6N02R2 |
Last Shipments |
|
Power MOSFET 20V 6.5A 35 mOhm Dual N-Channel SO-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
|
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