NTMFS4983NF:Power MOSFET 30V 106A 2.1 mOhm Single N-Channel SO-8FL with Schottky Diode

技术特性
  • Integrated Schottky Diode
  • Low RDS(on)to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • These Devices are Pb−Free and are RoHS Compliant

 

封装图 PACKAGE DIMENSIONS

NTMFS4983NF封装图

评估板信息
评估板 状况 无铅(Pb-free) 简短说明
ONS321A5VGEVB Active Pb-free FET EVAL BD W 5V VGS DR
ONS321B12VGEVB Active Pb-free FET EVAL BD W 12V VGS DR
订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMFS4983NFT1G Active
Pb-free
Halide free
Power MOSFET 30V 106A 2.1 mOhm Single N-Channel SO-8FL with Schottky Diode SO-8FL / DFN-5 488AA 1 Tape and Reel 1500 $0.6667
NTMFS4983NFT3G Active
Pb-free
Halide free
Power MOSFET 30V 106A 2.1 mOhm Single N-Channel SO-8FL with Schottky Diode SO-8FL / DFN-5 488AA 1 Tape and Reel 5000 $0.6667
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30V 106A 2.1 mOhm Single N-Channel SO-8FL with Schottky Diode NTMFS4983NF/D (94.0kB) 2