TIG058E8:IGBT, N-Channel, 150 A, 400 V
TIG058E8 is an N-Channel, 150 A, 400 V, Insulated Gate Bipolar Transistor (IGBT)for light-controlling flash applications.
技术特性
- Low saturation voltage
- Low voltage drive (4V)
- Enhansment type
- Built-in Gate-to-Emitter protection diode
- Mounting Height 0.9mm, Mounting Area 8.12mm2
- dv / dt guarantee
应用
- Light Controlling Flash Applications
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| TIG058E8-TL-H |
Active |
|
IGBT, N-Channel, 150 A, 400 V |
|
|
1 |
Tape and Reel |
3000 |
$0.4267 |
数据资料DataSheet下载
