FPD1050 0.75W Power pHEMT

The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx1050μm Schottky barrier gate defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1050 is also available in the low-cost plastic SOT89 package.

技术特性 Features
  • 28.5dBm Linear Output Power at 12GHz
  • 11dB Power Gain at 12GHz
  • 14dB Max Stable Gain at 12GHz
  • 41dBm OIP3
  • 45% Power-Added Efficiency
应用领域 Applications
  • Narrowband and Broadband High-Performance Amplifiers
  • SATCOM Uplink Transmitters
  • PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
  • Medium-Haul Digital Radio Transmitters
Frequency Range (Min) (MHz): 1000
Frequency Range (Max) (MHz): 16000
Gain (dB): 14
OP1dB (dBm): 28
OIP3 (dBm): 39
ISUPPLY (mA): 162.5
Package: Die
订购信息 Ordering Information
  • Standard Order Quantity (waffle-pack) FPD1050-000
  • Small Quantity (25) FPD1050-000SQ
  • Small Quantity (3) FPD1050-000S3
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD1050-000SQ 25 EA 25 EA Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe 1+ $18.16
FPD1050-000 100 EA 100 EA Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe 100+ $12.69
        750+ $8.84

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD1050 数据资料DataSheet下载:FPD1050 0.75W Power pHEMT 260 Rev A0 DS080702 3.0
FPD1050 S-Parameters.pdf