FPD1500SOT89CE Low-Noise High-Linearity Packaged pHEMT
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 1500μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels
技术特性 Features
- 27.5dBm Output Power (P1dB)
- 17dB Small Signal Gain (SSG)
- 0.9dB Noise Figure
- 42dBm OIP3
- 50% Power-Added Efficiency
- FPD1500SOT89CE: RoHS Compliant
应用领域 Applications
- Narrowband and Broadband
High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage
High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio
Transmitters
|
技术指标
| Frequency Range (Min) (MHz): |
500 |
| Frequency Range (Max) (MHz): |
6000 |
| Gain (dB): |
17 |
| NF (dB): |
0.9 |
| OP1dB (dBm): |
27.5 |
| OIP3 (dBm): |
42 |
| VSUPPLY (V): |
5 |
| Package: |
SOT-89 |
订购信息 Ordering Information
- FPD1500SOT89CESQ Sample bag with 25 pieces
- FPD1500SOT89CESR 7" Reel with 100 pieces
- FPD1500SOT89CE 7" Reel with 1000 pieces
- FPD1500SOT89PCK 1.85GHz PCBA with 5-piece sample bag
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD1500SOT89CESQ |
25 EA |
25 EA |
Standard 25 Piece Bag Shipping From Greensboro |
1+ |
$7.62 |
| FPD1500SOT89CESR |
100 EA |
100 EA |
Standard 100 Piece 7" Short Reel Shipping From Greensboro |
100+ |
$5.33 |
| FPD1500SOT89CE |
1000 EA |
1000 EA |
Standard 1000 Piece 13" Reel Shipping From Greensboro |
750+ |
$3.70 |
| FPD1500SOT89PCK |
1 EA |
1 EA |
Standard 1 Shipping From Greensboro |
1+ |
$250.00 |
