FPD200P70 High Frequency Packaged pHEMT

The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25mmx200mm Schottky barrier gate defined by high-resolution stepper- based photolithography.

技术特性 Features
  • 20dBm Output Power (P1dB)
  • 17dB Gain at 5.8GHz
  • 0.7dB Noise Figure at5.8GHz
  • 30dB Output IP3
  • 45% Power-Added Efficiency
  • Usable Gain to 26GHz
订购信息 Ordering Information
  • RoHS-Compliant Packaged pHEMT FPD200P70
  • 5.15GHz to 5.8GHz Evaluation Board EB200P70-AJ
  • Reel of 1000 FPD200P70
  • Reel of 100 FPD200P70SR
  • Bag of 25 FPD200P70SQ
  • Bag of 5 FPD200P70S
技术指标
Frequency Range (Min) (MHz): 1000
Frequency Range (Max) (MHz): 26000
Gain (dB): 17
NF (dB): 0.7
OP1dB (dBm): 19
OIP3 (dBm): 28
VSUPPLY (V): 5
ISUPPLY (mA): 30
Package: P70
应用领域 Applications
  • LNAs and Driver Amplifiers to26GHz
  • VCOs and Frequency Doublers
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD200P70SQ 25 EA 25 EA Standard 25 Piece Bag Shipping From Greensboro 1+ $7.58
FPD200P70SR 100 EA 100 EA Standard 100 Piece 7" Short Reel Shipping From Lu- Chung Hsiang, Iao-Yua 100+ $5.30
FPD200P70 1000 EA 1000 EA Standard 1000 Piece 13" Reel Shipping From Lu- Chung Hsiang, Iao-Yua 750+ $3.69

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD200P70 数据资料DataSheet下载:FPD200P70 High Frequency Packaged pHEMT 808 DS100601