FPD3000SOT89CE Low-Noise High-Linearity Packaged pHEMT

The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 3000μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

技术特性 Features
  • 30dBm Output Power (P1dB)
  • 13dB Small-Signal Gain (SSG)
  • 1.3dB Noise Figure
  • 45dBm OIP3
  • 45% Power-Added Efficiency
  • FPD3000SOT89CE: RoHS Compliant
应用领域 Applications
  • Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers
  • High Intercept-point LNAs
  • WLL, WLAN, and Other Types of Wireless Infrastructure Systems
Frequency Range (Min) (MHz): 500
Frequency Range (Max) (MHz): 4000
Gain (dB): 13
NF (dB): 0.9
OP1dB (dBm): 30
OIP3 (dBm): 45
Package: SOT-89
订购信息 Ordering Information
  • FPD3000SOT89CESQ Sample bad with 25 pieces
  • FPD3000SOT89CESR 7" Reel with 100 pieces
  • FPD3000SOT89CE 7" Reel with 1000 pieces
  • FPD3000SOT89PCK 1.85GHz PCBA with 5-piece sample bag
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD3000SOT89CESQ 25 EA 25 EA Standard 25 Piece Bag Shipping From Greensboro 1+ $10.55
FPD3000SOT89CESR 100 EA 100 EA Standard 100 Piece 7" Short Reel Shipping From Greensboro 100+ $7.38
FPD3000SOT89CE 1000 EA 1000 EA Standard 1000 Piece 13" Reel Shipping From Greensboro 750+ $5.13
FPD3000SOT89PCK 1 EA 1EA Standard 1000 Piece 13" Reel Shipping From Greensboro 1+ $250.00

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD3000SOT89CE 数据资料DataSheet下载:FPD3000SOT89CE Low-Noise High-Linearity Packaged pHEMT 744 DS111103