FPD750DFN Low Noise High Linearity Power pHEMT

The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25μmx750μm Schottky barrier Gate defined by high-resolution stepper-based photolithography. The recessed and offset gate structure minimizes parasitics to optimize performance with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.

技术特性 Features
  • 24dBm Output Power (P1dB) at 1.85GHz
  • 20dB Small-Signal Gain (SSG) at 1.85GHz
  • 0.3dB Noise Figure
  • 39dBm Output IP3 at 50% Bias
  • 45% Power-Added Efficiency
FPD750DFN 产品实物图

FPD750DFN 产品实物图

应用领域 Applications
  • Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers
  • High Intercept-Point LNAs
  • WLL and WLAN Systems, and Other Types of Wireless Infrastructure Systems
Frequency Range (Min) (MHz): 700
Frequency Range (Max) (MHz): 5000
Gain (dB): 20
NF (dB): 1.5
OP1dB (dBm): 24
OIP3 (dBm): 35
ISUPPLY (mA): 100
Package: DFN
订购信息 Ordering Information
  • Packaged pHEMT FPD750DFN
  • Packaged pHEMT evaluation board (2.0GHz) EB750DFN-BC
  • Reel of 1000 FPD750DFN
  • Reel of 100 FPD750DFNSR
  • Bag of 25 FPD750DFNSQ
  • Bag of 5 FPD750DFNSB

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD750DFN 数据资料DataSheet下载:FPD750DFN Low Noise High Linearity Power pHEMT 775 DS100126