FPD750SOT89E Low Noise High Linearity Packaged pHEMT

The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

技术特性 Features
  • 25dBm Output Power (P1dB)
  • 18dB Small-Signal Gain (SSG)
  • 0.6dB Noise Figure
  • 39dBm OIP3
  • 55% Power-Added Efficiency
  • FPD750SOT89E: RoHS Compliant (Directive 2002/95/EC)
FPD750SOT89E 产品实物图

FPD750SOT89E 产品实物图

应用领域 Applications
  • Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers
  • High Intercept-point LNAs
  • WLL, WLAN, and Other Types of Wireless Infrastructure Systems.
Frequency Range (Min) (MHz): 700
Frequency Range (Max) (MHz): 5000
Gain (dB): 18
NF (dB): 0.8
OP1dB (dBm): 25
OIP3 (dBm): 38
ISUPPLY (mA): 100
Package: SOT-89
订购信息 Ordering Information
  • RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) FPD750SOT89E
  • Packaged pHEMT evaluation board (2.0GHz) FPD750SOT89PCK
  • Reel of 1000 FPD750SOT89E
  • Reel of 100 FPD750SOT89ESR
  • Bag of 25 FPD750SOT89ESQ
  • Bag of 5 FPD750SOT89ESB
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD750SOT89ESQ 25 EA 25 EA Standard 25 Piece Bag Shipping From Greensboro 1+ $6.09
FPD750SOT89ESR 100 EA 100 EA Standard 100 Piece 7" Short Reel Shipping From Greensboro 100+ $4.26
FPD750SOT89E 1000 EA 1000 EA Standard 1000 Piece 13" Reel Shipping From Greensboro 750+ $2.96
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD750SOT89PCK 1 EA 1 EA Standard 1 Shipping From Greensboro 1+ $250.00


应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD750SOT89E 数据资料DataSheet下载:FPD750SOT89E Low Noise High Linearity Packaged pHEMT 917 DS110331