FPD750SOT89E Low Noise High Linearity Packaged pHEMT
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.
技术特性 Features
- 25dBm Output Power (P1dB)
- 18dB Small-Signal Gain (SSG)
- 0.6dB Noise Figure
- 39dBm OIP3
- 55% Power-Added Efficiency
- FPD750SOT89E: RoHS Compliant (Directive 2002/95/EC)
FPD750SOT89E 产品实物图
应用领域 Applications
- Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers
- High Intercept-point LNAs
- WLL, WLAN, and Other Types of Wireless Infrastructure Systems.
|
技术指标
| Frequency Range (Min) (MHz): |
700 |
| Frequency Range (Max) (MHz): |
5000 |
| Gain (dB): |
18 |
| NF (dB): |
0.8 |
| OP1dB (dBm): |
25 |
| OIP3 (dBm): |
38 |
| VSUPPLY (V): |
5 |
| ISUPPLY (mA): |
100 |
| Package: |
SOT-89 |
订购信息 Ordering Information
- RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) FPD750SOT89E
- Packaged pHEMT evaluation board (2.0GHz) FPD750SOT89PCK
- Reel of 1000 FPD750SOT89E
- Reel of 100 FPD750SOT89ESR
- Bag of 25 FPD750SOT89ESQ
- Bag of 5 FPD750SOT89ESB
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD750SOT89ESQ |
25 EA |
25 EA |
Standard 25 Piece Bag Shipping From Greensboro |
1+ |
$6.09 |
| FPD750SOT89ESR |
100 EA |
100 EA |
Standard 100 Piece 7" Short Reel Shipping From Greensboro |
100+ |
$4.26 |
| FPD750SOT89E |
1000 EA |
1000 EA |
Standard 1000 Piece 13" Reel Shipping From Greensboro |
750+ |
$2.96 |
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD750SOT89PCK |
1 EA |
1 EA |
Standard 1 Shipping From Greensboro |
1+ |
$250.00 |
