RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier
The RF3833 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3833 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
技术特性 Features
功能框图 Functional Block Diagram
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技术指标
应用领域 Applications
产品实物图
订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 大小(KB) | 版本信息 |
| RF3833 数据资料DataSheet下载.pdf | 150 | DS120411 |
