RF3930D 10W GaN On SiC Power Amplifier Die

The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3930D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3930D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >42dBm saturated power, >70% saturated drain efficiency, and >19dB small signal gain at 2GHz.

技术特性 Features
  • Broadband Operation DC to 4 GHz
  • Advanced GaN HEMT Technology
  • Packaged Small Signal Gain = 19 dB at 2 GHz
  • 48V Typical Performance:
  • Output Power: 16 W at P3dB
  • Drain Efficiency: 70% at P3dB
  • Large Signal Models Available
  • Chip Dimensions: 0.96 mm x 1.19 mm x 0.10 mm
  • Active Area Periphery: 2.2 mm
功能框图 Functional Block Diagram

RF3930D   功能框图

订购信息 Ordering Information
  • RF3930D 10W GaN on SIC Power Amplifier Die
Frequency Range (Min) (MHz): 0
Frequency Range (Max) (MHz): 4000
Gain (dB): 19
ISUPPLY (mA): 55
Package: Die
应用领域 Applications
  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Civilian and Military Radar
  • General Purpose Broadband Amplifiers
  • Public Mobile Radios
  • Industrial, Scientific and Medical

RF3930D   产品实物图

订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
RF3930D 1 EA 1 EA Standard 1 Piece Bag Shipping From Broomfield 1+ $56.10
        25+ $38.80
        100+ $30.50

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
RF3930D 数据资料DataSheet下载.pdf 657 DS110406