RF3931D 30W GAN on SIC Power Amplifier Die
The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, Industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3931D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3931D is an unmatched 0.5 µm gate, GaN transistor die suitable for many applications with >47dBm saturated power, >65% drain efficiency, and >14dB small signal gain at 2GHz.
技术特性 Features
- Broadband Operation DC-4 GHz
- Advanced GaN HEMT Technology
- Packaged Small Signal Gain = 14 dB at 2 GHz
- 48 V Typical Packaged Performance
- Output Power 50 W at P3dB
- Drain Efficiency 65 % at P3dB
- Large Signal Models Available
- Active Area Periphery: 6.6 mm
- Chip Dimensions: 0.96 mm x 1.33 mm x 0.10 mm
功能框图 Functional Block Diagram
订购信息 Ordering Information
- RF3931D 30W GaN on SiC Power Amplifier Di
|
技术指标
| Frequency Range (Min) (MHz): |
0 |
| Frequency Range (Max) (MHz): |
4000 |
| Gain (dB): |
14 |
| VSUPPLY (V): |
48 |
| ISUPPLY (mA): |
150 |
| Package: |
Die |
应用领域 Applications
- Commercial Wireless Infrastructure
- Cellular and WiMAX Infrastructure
- Civilian and Military Radar
- General Purpose Broadband Amplifiers
- Public Mobile Radios
- Industrial, Scientific and Medical
产品实物图
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| RF3931D |
1 EA |
1 EA |
Standard 1 Piece Bag Shipping From Broomfield |
1+ |
$71.40 |
| |
|
|
|
25+ |
$49.40 |
| |
|
|
|
100+ |
$38.90 |
