RF3932D 60W GaN on SiC Power Amplifier Die
The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3932D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3932D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with > 49dBm saturated power, > 70% saturated drain efficiency, and > 14dB small signal gain at 2GHz.
技术特性 Features
- Broadband Operation DC to 4GHz
- Advanced GaN HEMT Technology
- Packaged Small Signal Gain = 14dB at 2GHz
- 48V Typical Packaged Performance
- Output Power 75W at P3dB
- Drain Efficiency 70% at P3dB
- Large Signal Models Available
- Chip Dimensions: 0.96mm x 1.92mm x 0.10mm
- Active Area Periphery: 11.1mm
功能框图 Functional Block Diagram
订购信息 Ordering Information
- RF3932D 60W GaN on SiC Power Amplifier Die
|
技术指标
| Frequency Range (Min) (MHz): |
0 |
| Frequency Range (Max) (MHz): |
4000 |
| Gain (dB): |
14 |
| VSUPPLY (V): |
48 |
| ISUPPLY (mA): |
220 |
| Package: |
Die |
应用领域 Applications
- Commercial Wireless Infrastructure
- Cellular and WiMAX Infrastructure
- Civilian and Military Radar
- General Purpose Broadband Amplifiers
- Public Mobile Radios
- Industrial, Scientific, and Medical
产品实物图
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订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| RF3932D |
1 EA |
1 EA |
Standard 1 Shipping From Broomfield |
1+ |
$112.20 |
| |
|
|
|
25+ |
$77.70 |
| |
|
|
|
100+ |
$61.10 |
