RF3933D 90W GaN on SiC Power Amplifier Die

The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3933D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3933D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >49.5 dBm saturated power, >65% saturated drain efficiency, and >14dB small signal gain at 2GHz.

技术特性 Features

Broadband Operation DC to 4 GHz
Advanced GaN HEMT Technology
Packaged Small Signal Gain = 14 dB at 2 GHz
48 V Typical Packaged Performance
- Output Power 90 W at P3dB
- Drain Efficiency 65% at P3dB
Large Signal Models Available
Chip Dimensions: 0.96 mm x2.52 mm x 0.10 mm
Active Area Periphery: 15.54 mm

功能框图 Functional Block Diagram

订购信息 Ordering Information

RF3933D 90W GaN on SiC Power Amplifier Die

技术指标

Frequency Range (Min) (MHz):	0
Frequency Range (Max) (MHz):	4000
Gain (dB):	13.5
VSUPPLY (V):	48
ISUPPLY (mA):	300
Package:	Die

应用领域 Applications

Commercial Wireless Infrastructure
Cellular and WiMAX Infrastructure
Civilian and Military Radar
General Purpose Broadband Amplifiers
Public Mobile Radios
Industrial, Scientific, and Medical

产品实物图

订购信息 Ordering Information

订购型号	MOQ*	INC*	Packaging and Shipping Details	QTY	Per 1 EA
RF3933D	1 EA	1 EA	Standard 1 Piece Bag Shipping From Broomfield	1+	$156.80
				25+	$108.50
				100+	$85.30

应用技术支持与电子电路设计开发资源下载	大小(KB)	版本信息
RF3933D 数据资料DataSheet下载.pdf	1305	DS110520