RFHA1101 4.3W GaN on SiC Power Amplifier Die-on-Carrier

The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on-carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101 is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101 is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.

技术特性 Features
  • Broadband Operation DC to 10GHz
  • Advanced GaN HEMT Technology
  • Small Signal Gain=21.4dB at 2.14GHz 28V
  • Typical Performance
    • Output Power 4.3W at P3dB
    • Drain Efficiency 60% at P3dB
  • Dimensions
    • GaN die: 0.448 x 0.825 x 0.1mm
    • GaN die on Heat Sink: 1.25 x 1.25 x 0.3mm
  • Active Area Periphery: 2.22mm
功能框图 Functional Block Diagram

RFHA1101 功能框图

订购信息 Ordering Information
  • RFHA1101 4.3W GaN on SiC Power Amplifier Die-on-Carrier
Frequency Range (Min) (MHz): 0
Frequency Range (Max) (MHz): 10000
Gain (dB): 21.4
ISUPPLY (mA): 44.4
Package: Die-on-Carrier
应用领域 Applications
  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Civilian and Military Radar
  • General Purpose Broadband Amplifiers
  • Public Mobile Radios
  • Industrial, Scientific and Medical
RFHA1101 产品实物图

RFHA1101  产品实物图

订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
RFHA1101SB 5 EA 5 EA Standard 5 Piece Box Shipping From Greensboro 1+ $53.30
RFHA1101SQ 25 EA 25 EA Standard 25 Piece Bag Shipping From Nuernberg 25+ $36.90
        100+ $29.00

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
RFHA1101 数据资料DataSheet下载:PDF 1187 DS110719