SPA1118Z 850MHz, 1W Power Amplifier with Active Bias
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications
技术特性 Features
- High Linearity Performance
- +21dBm IS-95 Channel Power at -55dBc ACP
- +48dBm OIP3 Typical
- On-Chip Active Bias Control
- Patented High Reliability GaAs HBT Technology
- Surface-Mountable Plastic Package
产品实物图
功能框图 Functional Block Diagram
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技术指标
| Frequency Range (Min) (MHz): |
810 |
| Frequency Range (Max) (MHz): |
960 |
| Gain (dB): |
17.2 |
| NF (dB): |
7.5 |
| OP1dB (dBm): |
29.5 |
| OIP3 (dBm): |
48 |
| VSUPPLY (V): |
5 |
| ISUPPLY (mA): |
310 |
| Package: |
SOIC-8 |
应用领域 Applications
- PA Driver Amplifier
- Cellular, PCS, GSM, UMTS
- IF Amplifier
- Wireless Data, Satellite Terminals
订购信息 Ordering Information
- SPA1118Z 7” Reel with 500 pieces
- SPA1118ZSQ Sample bag with 25 pieces
- SPA1118ZSR 7” Reel with 100 pieces
- SPA1118Z-EVB1 850MHz to 950MHz PCBA with 5-piece sample bag
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