SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier

RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.

技术特性 Features
  • P1dB = 29.5dBm at 2140MHz
  • ACP = -65dBc with 17dBm Channel Power at 2140MHz
  • Low Thermal Resistance Package
  • Power Up/Down Control <1μs
  • Robust Class 1C ESD
应用领域 Applications
  • Macro/Micro-Cell Driver Stage
  • Pico-Cell Output Stage
  • GSM, CDMA, TDSCDMA,WCDMA, IS-95
  • Single and Multi-Carrier Applications
SPA1426Z 产品实物图

SPA1426Z    产品实物图

技术指标
Frequency Range (Min) (MHz): 700
Frequency Range (Max) (MHz): 2200
Gain (dB): 14
NF (dB): 5.3
OP1dB (dBm): 28.5
OIP3 (dBm): 47
VSUPPLY (V): 5
ISUPPLY (mA): 318
Package: SOF-26
订购信息 Ordering Information
  • SPA1426Z 7” Reel with 1000 pieces
  • SPA1426ZSQ Sample Bag with 25 pieces
  • SPA1426ZSR 7” Reel with 100 pieces
  • SPA1426ZPCK1 850MHz to 910MHz PCBA with 5 piece Sample Bag
  • SPA1426ZPCK2 1930MHz to 1960MHz PCBA with 5 piece Sample Bag
  • SPA1426ZPCK3 2110MHz to 2170MHz PCBA with 5 piece Sample Bag

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
SPA1426Z 数据资料DataSheet下载:PDF 815 DS120601