SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.

技术特性 Features
  • P1dB = 32dBm at 2140MHz
  • ACP = -65dBc with 18.4dBm Channel Power at 2140MHz
  • Low Thermal Resistance Package
  • Power Up/Down Control <1µs
  • Robust Class 1C ESD
应用领域 Applications
  • Macro/Micro-Cell Driver Stage
  • Pico-Cell Output Stage
  • GSM, CDMA, TDSCDMA,WCDMA, IS-95
  • Single and Multi-Carrier Applications
SPA1526Z 产品实物图

SPA1526Z    产品实物图

技术指标
Frequency Range (Min) (MHz): 700
Frequency Range (Max) (MHz): 2200
Gain (dB): 14
NF (dB): 5.5
OP1dB (dBm): 32.5
OIP3 (dBm): 49
VSUPPLY (V): 5
ISUPPLY (mA): 645
Package: SOF-26
订购信息 Ordering Information
  • SPA1526Z 7” Reel with 1000 pieces
  • SPA1526ZSQ Sample Bag with 25 pieces
  • SPA1526ZSR 7” Reel with 100 pieces
  • SPA1526ZPCK1 850MHz to 910MHz PCBA with 5 piece Sample Bag
  • SPA1526ZPCK2 1930MHz to 1960MHz PCBA with 5 piece Sample Bag
  • SPA1526ZPCK3 2110MHz to 2170MHz PCBA with 5 piece Sample Bag

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
SPA1526Z 数据资料DataSheet下载:PDF 997 DS120601