组合层叠式ComboMemory 存储器产品是高度集成的方案,在单个或多芯片封装中组合了SST的SuperFlash技术和静态RAM。这些 器件对于那些既需要flash和SRAM又受到空间限制的应用是理想的选择,如手机、传呼机、便携式消费电子产品、移动通信和和手持GPS设备等。
组合层叠式ComboMemory 存储器| 组合层叠式ComboMemory 存储器 | |||||
| Device | Density Flash | Density SRAM | Voltage | Access Speed(ns) | Packages |
| SST32HF802 | 8Mb MPF(512Kx16) | 2Mb (128Kx16) | 2.7-3.3V | 70 | LBGA-48(10mm*12mm),LFBGA-48(6mm*8mm) |
| SST32HF64A1/2 | 64Mb MPF+(4Mx16) | 16Mb PSRAM (1Mx16) | 2.7-3.3V | 70 | LFBGA-63(8mm*10mm),LFBGA-64(8mm*10mm) |
| SST32HF64B1/2 | 64Mb MPF+(4Mx16) | 32Mb PSRAM (2Mx16) | 2.7-3.3V | 70 | LFBGA-63(8mm*10mm),LFBGA-64(8mm*10mm) |
| SST34HF162G | 16Mb CSF(1Mx16) | 2Mb (128Kx16) | 2.7-3.3V | 70 | LFBGA-48(6mm*8mm) |
| SST34HF164G | 16Mb CSF(1Mx16) | 4Mb (256Kx16) | 2.7-3.3V | 70 | LFBGA-48(6mm*8mm) |
| SST34HF324G | 32Mb CSF(2Mx16) | 4Mb (256Kx16) | 2.7-3.3V | 70 | LFBGA-48(6mm*8mm) |
| SST34HF1621C/2C | 16Mb CSF(1Mx16 or 2Mx8) | 2Mb (128Kx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
| SST34HF1641J* | 16Mb CSF(1Mx16 or 2Mx8) | 4Mb PSRAM (256Kx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
| SST34HF1681J* | 16Mb CSF(1Mx16 or 2Mx8) | 8Mb PSRAM (512Kx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
| SST34HF3244* | 32Mb CSF(2Mx16 or 4Mx8) | 4Mb PSRAM (256Kx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
| SST34HF3284* | 32Mb CSF(2Mx16 or 4Mx8) | 8Mb PSRAM (512Kx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
| SST34HF32A4* | 32Mb CSF(2Mx16 or 4Mx8) | 16Mb PSRAM (1Mx16) | 2.7-3.3V | 70 | TFBGA-56(8mm*10mm),LFBGA-62(8mm*10mm) |
