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74AUP1G04 Inverter gate

The 74AUP1G04 is a low voltage CMOS single inverter gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.2 to 3.6 V operations and low power and low noise applications.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage

技术特性

• High speed: tPD = 4.3 ns (max.) at VCC = 2.3 V
• Power down protection on inputs and outputs
• Balanced propagation delays: tPLH ≈ tPHL
• Operating voltage range: VCC (opr) = 1.2 to 3.6 V
• Low power dissipation: Icc = 1 μA (max.) at TA = 85 °C
• Latch-up performance exceeds 300 mA (JESD 78, Class II)
• ESD performance:
  • 2000-V Human-Body Model (A114-A)
  • 200-V Machine Model (A115-A)
  • 1000-V Charged-Device Model (C101)

74AUP1G04 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
74AUP1G04DTR	Active		1000	VFDFPN 6 1x1.2x0.5	Tape And Reel		74AUP1G04DTR
74AUP1G04GTR	Active		1000	SOT-665 5	Tape And Reel		74AUP1G04GTR

DATASHEET

描述	版本	大小
74AUP1G04 : DS5781: Low power single inverter gate	1	391KB