BD679 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar base island technology with monolithic Darlington configuration

技术特性
  • Good hFE linearity
  • High fT frequency
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
应用领域
  • Linear and switching industrial equipment
内部原理图
BD6xxx 功能框图
BD679 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
BD679 Active   1000 SOT-32 Tube   BD679
DATASHEET
描述 版本 大小
BD679 :DS0882: Complementary power Darlington transistors 5 378KB