BUL128 High voltage fast-switching NPN power transistor
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies
技术特性
应用领域
|
内部原理图 |
BUL128 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| BUL128 | Active | 1000 | TO-220AB | Tube | BUL128 |
DATASHEET
| 描述 | 版本 | 大小 |
| BUL128 :High voltage fast-switching NPN power transistor | 8 | 236KB |
