技术特性

• Breakdown voltage: 12 V, 18 V
• Unidirectional device
• High peak power dissipation: 450 W (8/20 μs waveform)
• ESD protection level better than IEC 61000-4-2 level 4: 30 kV contact discharge.
• Low leakage current < 0.5 μA at 5 V
• PCB area: 1.3 mm2
• Benefits
  • High EOS and ESD protection level
  • High integration
  • Suitable for high density board
  • Small package
• Complies with the following standards
  • IEC 61000-4-2 level 4
    • 15 kV (air discharge)
    • 8 kV (contact discharge)
  • MIL STD 883G - Method 3015-7 Class 3B
    • HBM (Human Body Model): ≥ 8 kV

应用领域

• Computers
• Printers
• Communication systems
• Cellular phone handsets and accessories
• Video equipment

Benefits

• High EOS and ESD protection level
• High integration
• Suitable for high density board
• Small package

Complies with the following standards

• IEC 61000-4-2 level 4
  – 15 kV (air discharge)
  – 8 kV (contact discharge)
• MIL STD 883G - Method 3015-7 Class 3B
  – HBM (Human Body Model): ≥ 8 kV

功能框图