LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly
技术特性
- Excellent thermal stability
- Common source configuration
- POUT= 60 W with 17.2 dB gain @ 960 MHz / 28 V
- New RF plastic package
|
引脚定义图
 |
LET9060 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| LET9060STR |
Active |
|
1000 |
PowerSO-10RF (straight lead) |
Tape And Reel |
|
LET9060STR |
| LET9060 |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tube |
|
LET9060 |
| LET9060S |
Active |
|
1000 |
PowerSO-10RF (straight lead) |
Tube |
|
LET9060S |
| LET9060TR |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tape And Reel |
|
LET9060TR |
DATASHEET
| 描述 |
版本 |
大小 |
| LET9060 :DS7116: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs |
1 |
221KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
