LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz
技术特性
- Excellent thermal stability
- Common source configuration push-pull
- POUT = 150 W with 20 dB gain @ 860 MHz
- BeO-free package
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引脚输出
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LET9150 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| LET9150 |
Active |
|
1000 |
M246 |
Loose Piece |
|
LET9150 |
DATASHEET
| 描述 |
版本 |
大小 |
| LET9150 :RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs |
6 |
311KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
