M40Z111W 5V或3V的NVRAM

The M40Z111/W NVRAM supervisor is a self-contained device which converts a standard low-power SRAM into a non-volatile memory.

A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition.

When an invalid VCC condition occurs, the conditioned chip enable (ECON) output is forced inactive to write-protect the stored data in the SRAM.

During a power failure, the SRAM is switched from the VCC pin to the lithium cell within the SNAPHAT? to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write protected until a valid power condition returns.

The 28-pin, 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process.

Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

M40Z111W 订购型号
Ordering Model Package Conditioned Chip Enable Outputs(Econ) RST Threshold(VPFD) Packing Type
typ typ
V
M40Z111WMH6E SO 28 BATTERY 1 2.6 Tube
M40Z111WMH6F SO 28 BATTERY 1 2.6 Tape And Reel
M40Z111W 技术特性:
M40Z111W 技术支持与电子电路设计开发资源下载
  1. M40Z111W 数据手册DataSheet下载.PDF
  2. 微处理器监控器选型指南
  3. 相关产品选型(Excel 文档格式选型 Excel 文档格式)
  4. ST和竞争对手Atmel、Macronix、Holtek、Oki、Winbond的对照 (产品彩页, PDF)
  5. 周围半导体机顶盒应用. PDF
  6. L639x :在MOSFET和IGBT的SMARTDrive的?解决方案. PDF
  7. 汽车级稳压器. PDF
  8. 5相PWM控制器英特尔VR11.1的CPU. PDF
  9. DC - DC电源转换. PDF
  10. PM8800A :集成的PoE供电;设备接口和PWM控制器. PDF
  11. 汽车级半导体器件. PDF
  12. 复位及监事交叉参考指南. PDF
  13. GSR - 开关稳压器模块. PDF