M48Z35Y ZEROPOWER SRAM

The M48Z35/Y ZEROPOWER®RAM is a 32 K x 8, non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery-backed memory solution.

The M48Z35/Y is a non-volatile pin and function equivalent to any JEDEC standard 32 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin 600 mil DIP CAPHAT™houses the M48Z35/Y silicon with a long life lithium button cell in a single package.

The 28-pin 330 mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT®housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form.

For the 28-lead SOIC, the battery package (i.e. SNAPHAT) part number is “M4Z28-BR00SH1.”

技术特性
  • Integrated, ultra low power SRAM, power-fail control circuit, and battery
  • READ cycle time equals WRITE cycle time
  • Automatic power-fail chip deselect and WRITE protection
  • WRITE protect voltages: (VPFD= power-fail deselect voltage)
    • M48Z35: VCC= 4.75 to 5.5 V; 4.5 V ≤ VPFD≤ 4.75 V
    • M48Z35Y: 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
  • Self-contained battery in the CAPHAT™DIP package
  • Packaging includes a 28-lead SOIC and SNAPHAT®top (to be ordered separately)
  • Pin and function compatible with JEDEC standard 32 K x 8 SRAMs
  • SOIC package provides direct connection for a SNAPHAT®top which contains the battery
  • RoHS compliant
    • Lead-free second level interconnect
功能框图
M48Z35Y 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
M48Z35Y-70MH1F Active   1000 SO-28 Tape And Reel   M48Z35Y-70MH1F
M48Z35Y-70PC1 Active   1000 PDIP 28 .7 Tube   M48Z35Y-70PC1
DATASHEET
描述 版本 大小
M48Z35Y : DS0523: 256 Kbit (32 Kbit X 8) ZEROPOWER® SRAM 10 409KB
APPLICATION NOTES
描述 版本 大小
AN1012 : Predicting the battery life and data retention period of NVRAMs and serial RTCs 4 440KB
AN1011 : Battery technology used in NVRAM and real-time clock (RTC) products from ST 4 249KB
AN1009 : 'Negative undershoot' NVRAM data corruption 1 34KB