MJD122 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage

技术特性
  • Low collector-emitter saturation voltage
  • Integrated antiparallel collector-emitter diode
应用领域
  • General purpose linear and switching
内部原理图
MJD122 功能框图
MJD122 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
MJD122T4 Active   1000 DPAK Tape And Reel   MJD122T4
DATASHEET
描述 版本 大小
MJD122 :DS0777: Complementary power Darlington transistors 11 577KB